e.1 is.il ^>e.tnl-dona\jt.c.t:oi iptoaacfi, una. 20 stern ave. springfield, new jersey 07081 u.s.a. IRFZ34 power mosfet telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 product summary vds(v) flds(on) (^) qg (max.) (nc) qgs(nc) qgd (nc) configuration 60 vgs = 10v 0.050 46 11 22 single to-220ab go if u j, 0 s n-channel mosfet features ? dynamic dv/dt rating ? 175 c operating temperature ? fast switching ? ease of paralleling ? simple drive requirements absolute maximum ratings (tc = 25 c, unless otherwise noted) parameter drain-source voltage gate-source voltage continuous drain current tc = 25 c v-c it 10 v tc = 100c pulsed drain current3 linear derating factor single pulse avalanche energyb maximum power dissipation tc = 25 c peak diode recovery dv/dtc operating junction and storage temperature range soldering recommendations (peak temperature) mounting torque for 10 s 6-32 or m3 screw symbol vds vgs id idm eas pd dv/dt tj, tstg limit 60 20 30 21 120 0.59 200 88 4.5 -55to + 175 300d 10 1.1 unit v a w/c mj w v/ns c ibf ? in n -m notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. vdd = 25 v, starting t, = 25 c, l = 259 uh, rg = 25 u, ias = 30 a (see fig. 12). c. isd 30 a, dl/dt < 200 a/ms, vdd < vds, tj < 175 c. d. 1.6 mm from case. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
thermal resistance ratings parameter maximum junction-to-ambient case-to-sink, flat, greased surface maximum junction-to-case (drain) symbol rthja rthcs fyhjc typ. - 0.50 - max. 62 - 1.7 unit c/w specifications (tj = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage vds temperature coefficient gate-source threshold voltage gate-source leakage zero gate voltage drain current drain-source on-state resistance forward transconductance vds avds/tj vgs(th) igss bss rds(on) 9fs vgs = 0 v, id = 250 ua reference to 25 c, id = 1 ma vds = vgs, id = 250 ua vgs = 20 v vds = 60 v, vgs = 0 v vds = 48 v, vgs = 0 v, t, = 150 c vgs = 10v !d = 18ab vds = 25v, id = 18 a 60 - 2.0 - - - - 9.3 - 0.065 - - - - - - - - 4.0 100 25 250 0.050 - v v/c v na ma q. s dynamic input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance ciss cqss crss qg qgs qgd td(on) tr td(off) tf ld ls vgs = 0 v, vds = 25 v, f = 1.0 mhz, see fig. 5 v _10v id = 30 a, vds = 48v, see fig. 6 and 13b vdd = 30 v, id = 30 a, rg = 12fi, rd= 1.0 j, see fig. 10b between lead, 6 mm (0.25") from /fi~"% package and center of (i ni t } die contact v_^s - - - - - - - - - - - - 1200 600 100 - - - 13 100 29 52 4.5 7.5 - - - 46 11 22 - - - - - - pf nc ns nh drain-source body diode characteristics continuous source-drain diode current pulsed diode forward current" body diode voltage body diode reverse recovery time body diode reverse recovery charge forward turn-on time is ism vsd trr qrr ton mosfet symbol showing the n t~i\l reverse p - n junction diode tj = 25 c, ls = 30 a, vgs = 0 vb t 9r p 1 ^("1 a hi/ht 1 ho a/no - - - - - - - - 120 0.7 30 120 1.6 230 1.4 a v ns nc intrinsic turn-on time is negligible (turn-on is dominated by ls and ld) notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. pulse width < 300 us; duty cycle < 2 %.
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